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BTA312-600B Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer BTA312-600B
Bauteilbeschribung  3Q Hi-Com Triac
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

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NXP Semiconductors
BTA312-600B
3Q Hi-Com Triac
BTA312-600B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
5 / 11
003aab775
10-1
10-2
1
10
Zth(j-mb)
(K/W)
10-3
tp (s)
10-5
1
10
10-1
10-2
10-4
10-3
tp
PD
t
(1)
(2)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
2
-
50
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
2
-
50
mA
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
2
-
50
mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
-
-
60
mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
-
-
90
mA
IL
latching current
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
-
-
60
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
-
-
60
mA
VT
on-state voltage
IT = 15 A; Tj = 25 °C; Fig. 10
-
1.3
1.6
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25
0.4
-
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
-
0.8
1.5
V
ID
off-state current
VD = 600 V; Tj = 125 °C
-
0.1
0.5
mA


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