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BTA312-600B Datenblatt(PDF) 1 Page - NXP Semiconductors |
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BTA312-600B Datenblatt(HTML) 1 Page - NXP Semiconductors |
1 / 11 page BTA312-600B 3Q Hi-Com Triac 4 October 2012 Product data sheet Scan or click this QR code to view the latest information for this product 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 1.2 Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High voltage capability • Less sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high immunity to false turn-on by dV/dt 1.3 Applications • Electronic thermostats (heating and cooling) • High power motor controls e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDRM repetitive peak off- state voltage - - 600 V ITSM non-repetitive peak on- state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - - 100 A IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C; Fig. 1; Fig. 2; Fig. 3 - - 12 A Static characteristics VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 2 - 50 mA IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 2 - 50 mA |
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Ähnliche Beschreibung - BTA312-600B |
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