Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLWI610A Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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IRLWI610A Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page IRLW/I610A BV DSS = 200 V R DS(on) = 1.5Ω I D = 3.3 A 200 3.3 2.1 12 ±20 29 3.3 3.3 5 3.1 33 0.26 - 55 to +150 300 3.81 40 62.5 -- -- -- 1 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ V DS = 200V ♦ Lower R DS(ON): 1.185Ω (Typ.) $GYDQFHG 3RZHU 026)(7 Thermal Resistance Junction-to-Case Junction-to-Ambient Junction-to-Ambient RθJC RθJA RθJA °C/W Characteristic Max. Units Symbol Typ. FEATURES D2-PAK 1. Gate 2. Drain 3. Source 1 3 2 1 2 3 I2-PAK * * When mounted on the minimum pad size recommended (PCB Mount). Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TA=25°C) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Characteristic Value Units Symbol IDM VGS EAS IAR EAR dv/dt PD ID TJ , TSTG TL A V mJ A mJ V/ns W W W/ °C A °C VDSS V * ©1999 Fairchild Semiconductor Corporation Rev. B |
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