J111

J112

J113

MMBFJ111

MMBFJ112

MMBFJ113

N-Channel Switch

This device is designed for low level analog switching, sample

and hold circuits and chopper stabilized amplifiers. Sourced

from Process 51.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Drain-Gate Voltage

35

V

Gate-Source Voltage

- 35

V

Forward Gate Current

50

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

J111- J113

*MMBFJ111

Total Device Dissipation

Derate above 25

°C

350

2.8

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Case

125

°C/W

Thermal Resistance, Junction to Ambient

357

556

°C/W

SOT-23

Mark: 6P / 6R / 6S

G

S

D

G

S

D

TO-92

Discrete POWER & Signal

Technologies

©1997 Fairchild Semiconductor Corporation