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KSD1621 Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer KSD1621
Bauteilbeschribung  High Current Driver Applications
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSD1621 Datenblatt(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
* Mounted on Ceramic Board (250mm2x0.8mm)
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Width=20
µs, Duty Cycle≤1%
hFE Classification
Symbol
Parameter
Ratings
Units
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
2
A
PC
PC*
Collector Power Dissipation
500
1.3
mW
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=10µA, IE=0
30
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
25
V
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
6
V
ICBO
Collector Cut-off Current
VCB=20V, IE=0
100
nA
IEBO
Emitter Cut-off Current
VBE=4V, IC=0
100
nA
hFE1
hFE2
DC Current Gain
VCE=2V, IC=0.1A
VCE=2V, IC=1.5A
100
65
560
VCE (sat)
Collector-Emitter Saturation Voltage
IC=1.5A, IB=75mA
0.18
0.4
V
VBE (sat)
Base-Emitter Saturation Voltage
IC=1.5A, IB=75mA
0.85
1.2
V
fT
Current Gain Bandwidth product
VCE=10V, IC=50mA
150
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
19
pF
tON
* Turn On Time
VCC=12V, VBE=5V
IB1= -IB2=25mA
IC=0.5A, RL=25Ω
60
ns
tSTG
* Storage Time
500
ns
tF
* Fall Time
25
ns
Classification
R
S
T
U
hFE
100 ~ 200
140 ~ 280
200 ~ 400
280 ~ 560
KSD1621
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSB1121
SYX
Marking
hFE grade
1. Base 2. Collector 3. Emitter
SOT-89
1


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