Datenblatt-Suchmaschine für elektronische Bauteile |
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KSD1621 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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KSD1621 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics T a=25°C unless otherwise noted * Pulse Width=20 µs, Duty Cycle≤1% hFE Classification Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC PC* Collector Power Dissipation 500 1.3 mW W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V ICBO Collector Cut-off Current VCB=20V, IE=0 100 nA IEBO Emitter Cut-off Current VBE=4V, IC=0 100 nA hFE1 hFE2 DC Current Gain VCE=2V, IC=0.1A VCE=2V, IC=1.5A 100 65 560 VCE (sat) Collector-Emitter Saturation Voltage IC=1.5A, IB=75mA 0.18 0.4 V VBE (sat) Base-Emitter Saturation Voltage IC=1.5A, IB=75mA 0.85 1.2 V fT Current Gain Bandwidth product VCE=10V, IC=50mA 150 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 19 pF tON * Turn On Time VCC=12V, VBE=5V IB1= -IB2=25mA IC=0.5A, RL=25Ω 60 ns tSTG * Storage Time 500 ns tF * Fall Time 25 ns Classification R S T U hFE 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 KSD1621 High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 SYX Marking hFE grade 1. Base 2. Collector 3. Emitter SOT-89 1 |
Ähnliche Teilenummer - KSD1621 |
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Ähnliche Beschreibung - KSD1621 |
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