Datenblatt-Suchmaschine für elektronische Bauteile |
|
KSD1943 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
|
KSD1943 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 3 A PC Collector Dissipation (Ta=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 25mA, IB = 0 60 V ICBO Collector Cut-off Current VCB = 80V, IE = 0 100 µA IEBO Emitter Cut-off Current VEB = 8V, IC = 0 10 µA hFE DC Current Gain VCE = 4V, IC = 0.5A 400 2000 VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.05A 1.5 V VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.05A 1 V KSD1943 High Power Transistor 1.Base 2.Collector 3.Emitter 1 TO-220 |
Ähnliche Teilenummer - KSD1943 |
|
Ähnliche Beschreibung - KSD1943 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |