STP11NM65N datasheet(5/21 Pages) STMICROELECTRONICS

Teilenummer	STP11NM65N

Bauteilbeschribung	N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages

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5 / 21 page

Doc ID 13476 Rev 4

5/21

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N

Electrical characteristics

21

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d (on)

Turn-on delay time

V

DD

= 325 V, I

D

= 5.5 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 20 and

Figure 23)

-15.5

-

ns

t

r

Rise time

-

10.8

-

ns

t

d(off)

Turn-off delay time

-

11

-

ns

t

f

Fall time

-

47

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

11

44

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 11 A, V

GS

= 0

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 11 A, di/dt = 100 A/μs

V

DD

= 60 V (see

Figure 23)

-

418

ns

Q

rr

Reverse recovery charge

-

4.4

μC

I

RRM

Reverse recovery current

-

21

A

t

rr

Reverse recovery time

I

SD

= 11 A, di/dt = 100 A/μs

V

DD

= 60 V, T

j

= 150 °C

(see

Figure 23)

-

530

ns

Q

rr

Reverse recovery charge

-

5.6

μC

I

RRM

Reverse recovery current

-

21

A

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