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STP20N95K5 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP20N95K5
Bauteilbeschribung  N-channel 950 V, 0.275 廓, 17.5 A SuperMESH 5??Power MOSFET in D짼PAK, TO-220FP, TO-220 and TO-247 packages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Electrical ratings
Doc ID 16825 Rev 4
3/20
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK
TO-220
TO-247
STF20N95K5
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
17.5
A
ID
Drain current (continuous) at TC = 100 °C
11
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
70
A
PTOT
Total dissipation at TC = 25 °C
250
40
W
IAR
Max current during repetitive or single
pulse avalanche
(pulse width limited by Tjmax )
6A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
200
mJ
ESD
Gate-source human body model
(R= 1,5 k
Ω, C = 100 pF)
2kV
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
dv/dt (2)
2.
ISD ≤ 17.5 A, di/dt ≤ 100 A/µs, VPeak ≤V(BR)DSS
Peak diode recovery voltage slope
6
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK
TO-220 TO-247 TO-220FP
Rthj-case Thermal resistance junction-case max
0.5
3.1
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
50
62.5
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
30
°C/W


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