Datenblatt-Suchmaschine für elektronische Bauteile |
|
MTB09N06J3 Datenblatt(PDF) 5 Page - Cystech Electonics Corp. |
|
MTB09N06J3 Datenblatt(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C912J3 Issued Date : 2013.07.24 Revised Date : Page No. : 5/ 9 MTB09N06J3 CYStek Product Specification Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) Ta=25°C Pulsed VDS=5V Gate Charge Characteristics 0 2 4 6 8 10 0 1020 30405060 Qg, Total Gate Charge(nC) VDS=30V ID=20A Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) TC=25°C, Tj=175°C VGS=10V, θJC=2°C/W Single Pulse DC 100ms RDSON Limited 1s 100μs 1m 10ms Maximum Drain Current vs Case Temperature 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=2°C/W Silicon limit Package limit Typical Transfer Characteristics 0 20 40 60 80 100 120 140 01 23 45 VGS, Gate-Source Voltage(V) VDS=10V Single Pulse Power Rating, Junction to Case 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 0.001 0.01 0.1 1 10 100 Pulse Width(s) TJ(MAX)=175°C TC=25°C θJC=2°C/W |
Ähnliche Teilenummer - MTB09N06J3 |
|
Ähnliche Beschreibung - MTB09N06J3 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |