Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1967DH-T1-GE3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI1967DH-T1-GE3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 68784 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 3 Vishay Siliconix Si1967DH TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS =5 V thru 2.5 V VGS =2 V VGS =1 V VGS =1.5 V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID - Drain Current (A) VGS =4.5 V VGS =1.8V VGS =2.5 V 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Qg - Total Gate Charge (nC) VDS =16 V VDS =10 V ID =1A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 40 80 120 160 200 036 9 12 Ciss VDS - Drain-to-Source Voltage (V) Coss Crss 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =4.5 V,2.5 V;ID =0.91A VGS =1.8V;ID =0.12A |
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