Datenblatt-Suchmaschine für elektronische Bauteile |
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MMBTH11 Datenblatt(PDF) 8 Page - Fairchild Semiconductor |
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MMBTH11 Datenblatt(HTML) 8 Page - Fairchild Semiconductor |
8 / 8 page Test Circuits (continued) 1000 pF 1000 pF 0.002 µµµµµF 4.0-30 pF 1000 pF V CC = 12 V 2.2 K Ω Ω Ω Ω Ω 1/2 W R.F. Beads 50 Ω Ω Ω Ω Ω Input 50 Ω Ω Ω Ω Ω Output V AGC 390 Ω Ω Ω Ω Ω 1/2 W 2K Ω Ω Ω Ω Ω T1 270 Ω Ω Ω Ω Ω 1/2 W T1 - Q3 Toroid 4:1 ratio 8 turns Pri. 2 turns Sec. } No. 22 wire FIGURE 2: 45 MHz Power Gain Circuit 200 mHz Output into 50 Ω RF in LO in 2.0 pF 300 pF 1000 pF L 1 47 K Ω Ω Ω Ω Ω 245 mHz Output into 50 Ω V CE V BB T 1 1.1 pF 20pF 1000 pF 45 mHz Output into 50 Ω V CE = 15 V FIGURE 3: 200 MHz Conversion Gain Test Circuit L1 - Ohmite RFC Z235 T1 - Primary 5 turns No. 34 wire 1/4 inch diameter. Secondary runs No. 34 wire closer wound over a Q100 core (10.7 mHz). When terminated onm secondary side with 50 Ω primary measures 1.5 K, -25 pF. NPN RF Transistor (continued) |
Ähnliche Teilenummer - MMBTH11 |
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Ähnliche Beschreibung - MMBTH11 |
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