Datenblatt-Suchmaschine für elektronische Bauteile |
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MMBTH24 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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MMBTH24 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 4.0 V ICBO Collector Cutoff Current VCB = 15 V, IE = 0 50 nA ON CHARACTERISTICS hFE DC Current Gain IC = 8.0 mA, VCE = 10 V 30 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 8.0 mA, VCE = 10 V, f = 100 MHz 400 MHz Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.36 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NPN RF Transistor (continued) |
Ähnliche Teilenummer - MMBTH24 |
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Ähnliche Beschreibung - MMBTH24 |
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