2SAR533P datasheet(2/8 Pages) ROHM

Teilenummer	2SAR533P

Bauteilbeschribung	PNP -3.0A -50V Middle Power Transistor

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Hersteller	ROHM [Rohm]

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Data Sheet

2SAR533P / 2SAR533D

lElectrical characteristics

(Ta = 25°C)

*1 Pulsed

*2 See switching time test circuit

lSwitching time test circuit

Unit

Collector-emitter

breakdown voltage

BVCEO

IC = -1mA

-

50

-

V

Parameter

Symbol

Conditions

Min.

Typ.

Max.

V

Emitter-base

breakdown voltage

BVEBO

IE = -100mA

-

6

-

V

Collector-base

breakdown voltage

BVCBO

IC = -100mA

-

50

-

m

A

Emitter cut-off current

IEBO

VEB = -4V

-

1

m

A

Collector cut-off current

ICBO

VCB = -50V

-

1

-

V

DC current gain

hFE

VCE = -3V, IC = -50mA

180

-

450

-

Collector-emitter

saturation voltage

VCE(sat) *1 IC = -1A, IB = -50mA

-

0.20

-

0.40

tf *2

-

35

MHz

Output capacitance

Cob

VCB = -10V, IE = 0A

f = 1MHz

-

24

-

pF

Transition frequency

fT

VCE = -10V, IE = -500mA

f=100MHZ

-

300

-

ns

Storage time

tstg *2

-

250

-

ns

Turn-on time

ton *2

IC= -1.5A

IB1= -150mA

IB2=150mA

VCC⋍ -10V

-

45

-

Fall time

2/7

2013.05 - Rev.B

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