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OP193FSZ-REEL1 Datenblatt(PDF) 7 Page - Analog Devices |
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OP193FSZ-REEL1 Datenblatt(HTML) 7 Page - Analog Devices |
7 / 20 page OP193/OP293 Rev. C | Page 7 of 20 VS = 2.0 V, VCM = 0.1 V, TA = 25°C, unless otherwise noted. Table 4. E Grade F Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP193 150 μV OP193, −40°C ≤ TA ≤ +125°C 250 μV OP293 100 250 μV OP293, −40°C ≤ TA ≤ +125°C 175 350 μV Input Bias Current IB −40°C ≤ TA ≤ +125°C 15 20 nA Input Offset Current IOS −40°C ≤ TA ≤ +125°C 2 4 nA Input Voltage Range VCM 0 1 0 1 V Large Signal Voltage Gain AVO RL = 100 kΩ, 0.03 V ≤ VOUT ≤ 1 V 60 60 V/mV −40°C ≤ TA ≤ +125°C 70 70 V/mV Long-Term Offset Voltage VOS 150 300 μV POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 1.7 V to 6 V 100 97 dB −40°C ≤ TA ≤ +125°C 94 90 dB Supply Current/Amplifier ISY VCM = 1.0 V, RL = ∞ 13.2 20 13.2 20 μA −40°C ≤ TA ≤ +125°C 25 25 μA Supply Voltage Range VS +2 ±18 +2 ±18 V NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 65 65 nV/√Hz Current Noise Density in f = 1 kHz 0.05 0.05 pA/√Hz Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 μV p-p DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 10 25 V/ms Gain Bandwidth Product GBP 25 kHz |
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