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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FQP12N60C Datenblatt(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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FQP12N60C Datenblatt(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 9 page  FQP12N60C/FQPF12N60C 600V N-Channel MOSFET General Description Features • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 21 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP12N60C FQPF12N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 12 12 * A - Continuous (TC = 100°C) 7.4 7.4 * A IDM Drain Current - Pulsed (Note 1) 48 48 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 870 mJ IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 225 51 W - Derate above 25°C 1.78 0.41 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP12N60C FQPF12N60C Units RθJC Thermal Resistance, Junction-to-Case 0.56 2.43 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W TO-220 FQP Series G S D TO-220F FQPF Series G S D ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. |
Ähnliche Teilenummer - FQP12N60C |
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Ähnliche Beschreibung - FQP12N60C |
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