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BTA316X-800B0 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BTA316X-800B0
Bauteilbeschribung  3Q Hi-Com Triac
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BTA316X-800B0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 17 November 2011
2 of 14
NXP Semiconductors
BTA316X-800B0
3Q Hi-Com Triac
1.4 Quick reference data
2.
Pinning information
3.
Ordering information
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDRM
repetitive peak off-state
voltage
-
-
800
V
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) =25°C; tp = 20 ms;
see Figure 4; see Figure 5
-
-
140
A
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 45 °C; see Figure 1;
see Figure 2; see Figure 3
--16
A
Static characteristics
IGT
gate trigger current
VD =12V; IT = 0.1 A; T2+ G+; Tj =25°C;
see Figure 7
10
-
50
mA
VD =12V; IT = 0.1 A; T2+ G-; Tj =25°C;
see Figure 7
10
-
50
mA
VD =12V; IT = 0.1 A; T2- G-; Tj =25°C;
see Figure 7
10
-
50
mA
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
T1
main terminal 1
SOT186A (TO-220F)
2
T2
main terminal 2
3
G
gate
mb
n.c.
mounting base; isolated
3
2
1
mb
sym051
T1
G
T2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BTA316X-800B0
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
SOT186A


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