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BTA316X-800B0 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BTA316X-800B0 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BTA316X-800B0 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 17 November 2011 3 of 14 NXP Semiconductors BTA316X-800B0 3Q Hi-Com Triac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 800 V IT(RMS) RMS on-state current full sine wave; Th ≤ 45 °C; see Figure 1; see Figure 2; see Figure 3 -16 A ITSM non-repetitive peak on-state current full sine wave; Tj(init) =25°C; tp = 20 ms; see Figure 4; see Figure 5 - 140 A full sine wave; Tj(init) =25°C; tp = 16.7 ms - 150 A I2t I2t for fusing tp = 10 ms; sine-wave pulse - 98 A2s dIT/dt rate of rise of on-state current IT =20A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C f = 50 Hz; Th = 45 °C Fig 1. RMS on-state current as a function of surge duration; maximum values Fig 2. RMS on-state current as a function of heatsink temperature; maximum values 003aab669 0 20 40 60 80 100 120 10 -2 10 -1 1 10 surge duration (s) IT(RMS) (A) 003aab667 0 4 8 12 16 20 -50 0 50 100 150 Th ( °C) IT(RMS) (A) |
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