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BTA316X-800B0 Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer BTA316X-800B0
Bauteilbeschribung  3Q Hi-Com Triac
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BTA316X-800B0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 17 November 2011
6 of 14
NXP Semiconductors
BTA316X-800B0
3Q Hi-Com Triac
5.
Thermal characteristics
6.
Isolation characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance from
junction to heatsink
full cycle or half cycle; with heatsink
compound; see Figure 6
--4
K/W
full cycle or half cycle; without heatsink
compound; see Figure 6
--5.5
K/W
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
55
-
K/W
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig 6.
Transient thermal impedance from junction to heatsink as a function of pulse duration
003aab672
10-1
10-2
1
10
Zth(j-h)
(K/W)
10-3
tp (s)
10-5
110
10-1
10-2
10-4
10-3
(1)
(2)
(3)
(4)
tp
P
t
Table 6.
Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
from all three terminals to external heatsink;
sinusoidal waveform; clean and dust free ;
50 Hz
≤ f ≤ 60 Hz; RH ≤ 65 %; Th =25°C
-
-
2500
V
Cisol
isolation capacitance
from main terminal 2 to external heatsink ;
f=1MHz; Th =25°C
-10
-pF


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