2SK1062

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK1062

High Speed Switching Applications

Analog Switching Applications

Interface Applications

• Enhancement-mode

• Complementary to 2SJ168

Characteristics

Symbol

Rating

Unit

Drain-source voltage

60

V

Gate-source voltage

±20

V

DC

200

Drain current

Pulse

800

mA

Drain power dissipation (Ta

= 25°C)

200

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)