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SIZ700DT-T1-GE3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SIZ700DT-T1-GE3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 Vishay Siliconix SiZ700DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 15 30 45 60 0.0 0.3 0.6 0.9 1.2 1.5 VGS = 10 V thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.000 0.004 0.008 0.012 0.016 015 30 45 60 VGS =4.5 V VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 0 5 10 15 20 ID =15A VDS =15 V VDS =10 V VDS =5 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 300 600 900 1200 1500 1800 0 5 10 15 20 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =10 V VGS =4.5 V ID =15A TJ -Junction Temperature (°C) |
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Ähnliche Beschreibung - SIZ700DT-T1-GE3 |
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