Electrical characteristics

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

4/24

DocID024710 Rev 2

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 1 mA, V

GS

= 0

600

V

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 600 V

V

DS

= 600 V, T

C

=125 °C

1

100

μA

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 25 V

±10

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

234

V

R

DS(on)

Static drain-source

on-resistance

V

GS

= 10 V, I

D

= 3 A

0.550

0.600

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 100 V, f = 1 MHz,

V

GS

= 0

-400

-

pF

C

oss

Output capacitance

-

22

-

pF

C

rss

Reverse transfer

capacitance

-0.84

-

pF

C

oss eq.

(1)

1.

C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent output

capacitance

V

DS

= 0 to 480 V, V

GS

= 0

-

83

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz open drain

-

6.4

-

Ω

Q

g

Total gate charge

V

DD

= 480 V, I

D

= 7.5 A,

V

GS

= 10 V

(see

Figure 17)

-

13.5

-

nC

Q

gs

Gate-source charge

-

2.1

-

nC

Q

gd

Gate-drain charge

-

7.2

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 300 V, I

D

= 3.75 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 16 and

Figure 21)

-8.8

-

ns

t

r

Rise time

-

8

-

ns

t

d(off)

Turn-off delay time

-

32.5

-

ns

t

f

Fall time

-

13.2

-

ns