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AM29DL800BT120FE Datenblatt(PDF) 1 Page - Advanced Micro Devices |
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AM29DL800BT120FE Datenblatt(HTML) 1 Page - Advanced Micro Devices |
1 / 43 page PRELIMINARY This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 21519 Rev: A Amendment/+3 Issue Date: April 1998 Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-while-program s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications s Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29DL800 device s High performance — Access times as fast as 70 ns s Low current consumption (typical values at 5 MHz) — 7 mA active read current — 21 mA active read-while-program or read-while- erase current — 17 mA active program-while-erase-suspended current — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode s Flexible sector architecture — Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode — Any combination of sectors can be erased — Supports full chip erase s Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences s Sector protection — Hardware method of locking a sector to prevent any program or erase operation within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors s Top or bottom boot block configurations available s Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip — Embedded Program algorithm automatically programs and verifies data at specified address s Minimum 1,000,000 program/erase cycles guaranteed per sector s Package options — 44-pin SO — 48-pin TSOP — 48-ball FBGA s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard — Superior inadvertent write protection s Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion s Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion s Erase Suspend/Erase Resume — Suspends or resumes erasing sectors to allow reading and programming in other sectors — No need to suspend if sector is in the other bank s Hardware reset pin (RESET#) — Hardware method of resetting the device to reading array data |
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