STP15N65M5 datasheet(4/17 Pages) STMICROELECTRONICS

Teilenummer	STP15N65M5

Bauteilbeschribung	N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET

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Electrical characteristics

STF15N65M5, STFI15N65M5, STP15N65M5

4/17

Doc ID 022863 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 5.5 A

0.308

0.34

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

816

23

2.6

-

pF

Co(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

-70

-

pF

Co(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

5

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 5.5 A,

VGS = 10 V

(see Figure 18)

-

22

5.5

11

-

nC

Ähnliche Beschreibung - STP15N65M5

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