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1PS70SB45 Datenblatt(PDF) 7 Page - NXP Semiconductors

Teilenummer 1PS70SB45
Bauteilbeschribung  General-purpose Schottky diodes
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

1PS70SB45 Datenblatt(HTML) 7 Page - NXP Semiconductors

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BAS40_1PSXXSB4X_SER_8
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 08 — 13 January 2010
7 of 21
NXP Semiconductors
BAS40 series; 1PSxxSB4x series
General-purpose Schottky diodes
6.
Thermal characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Soldering point at pins 2, 3, 5 and 6.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 μs; δ≤ 0.02.
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT23
-
-
500
K/W
SOT143B
-
-
500
K/W
SOT363 (1PS88SB48)
-
-
416
K/W
SOT416
-
-
833
K/W
SOT666 (BAS40-05V)
[2] --
225
K/W
SOT666 (BAS40-07V)
[2] --
416
K/W
SOD123F
[2] --
330
K/W
SOD323
-
-
450
K/W
SOD523
[2] --
450
K/W
SOD882
[2] --
500
K/W
SOT323
-
-
625
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
SOT363 (BAS40XY)
[3] --
260
K/W
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
[1]
IF = 1 mA
-
-
380
mV
IF = 10 mA
-
-
500
mV
IF =40mA
-
-
1
V
IR
reverse current
VR =30V
-
-
1
μA
VR =40V
-
-
10
μA
Cd
diode capacitance
VR =0V; f=1MHz
-
-
5
pF


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