Datenblatt-Suchmaschine für elektronische Bauteile |
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FQP11N40C Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FQP11N40C Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2003 Fairchild Semiconductor Corporation FQP11N40C / FQPF11N40C Rev. C1 www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area of FQP11N40C of FQPF11N40C Figure10.MaximumDrainCurrent -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : 1. V GS = 0 V 2. I D = 250μA T J, Junction Temperature [°C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : 1. V GS = 10 V 2. I D = 5.25 A T J, Junction Temperature [°C] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 10 μs DC 10 ms 1 ms 100 μs Operation in This Area is Limited by R DS(on) Notes : 1. T C = 25°C 2. T J = 150°C 3. Single Pulse V DS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 10 μs DC 10 ms 1 ms 100 μs Operation in This Area is Limited by R DS(on) Notes : 1. T C = 25°C 2. T J = 15°C 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 12 T C, Case Temperature [°C] |
Ähnliche Teilenummer - FQP11N40C |
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Ähnliche Beschreibung - FQP11N40C |
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