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OP292GSZ1 Datenblatt(PDF) 4 Page - Analog Devices

Teilenummer OP292GSZ1
Bauteilbeschribung  Dual/Quad Single-Supply Operational Amplifiers
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OP292/OP492
Rev. C | Page 4 of 20
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 kΩ
3
V/μs
−40°C ≤ TA ≤ +125°C
1
2
V/μs
Gain Bandwidth Product
GBP
4
MHz
Phase Margin
φm
75
Degrees
Channel Separation
CS
fO = 1 kHz
100
dB
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
25
μV p-p
Voltage Noise Density
en
f = 1 kHz
15
nV/√Hz
Current Noise Density
in
0.7
pA/√Hz
1 Long-term offset voltage drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 125°C with LTPD of 1.3.
VS =±15 V, VCM = 0 V, VO = 2 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
OP292
VOS
1.0
2.0
mV
−40°C ≤ TA ≤ +85°C
1.2
2.5
mV
−40°C ≤ TA ≤ +125°C
1.5
3
mV
OP492
VOS
1.4
2.5
mV
−40°C ≤ TA ≤ +85°C
1.7
2.8
mV
−40°C ≤ TA ≤ +125°C
2
3
mV
Input Bias Current
IB
375
700
nA
−40°C ≤ TA ≤ +125°C
0.5
1
μA
Input Offset Current
IOS
7
50
nA
−40°C ≤ TA ≤ +85°C
20
100
nA
−40°C ≤ TA ≤ +125°C
0.4
1.2
μA
Input Voltage Range1
−11
+11
V
Common-Mode Rejection Ratio
CMRR
VCM = ±11 V
78
100
dB
−40°C ≤ TA ≤ +125°C
75
95
dB
Large Signal Voltage Gain
AVO
RL = 10 kΩ, VO =±10 V
25
120
V/mV
−40°C ≤ TA ≤ +85°C
10
75
V/mV
−40°C ≤ TA ≤ +125°C
5
60
V/mV
Offset Voltage Drift
ΔVOS/ΔT
−40°C ≤ TA ≤ +125°C
4
10
μV/°C
Bias Current Drift
ΔIB/ΔT
−40°C ≤ TA ≤ +125°C
3
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing
VO
RL = 2 kΩ to GND
±11
±12.2
V
−40°C ≤ TA ≤ +125°C
±10
±11
V
RL = 100 kΩ to GND
±13.8
±14.3
V
−40°C ≤ TA ≤ +125°C
±13.5
±14.0
mV
Short-Circuit Current Limit
ISC
Short circuit to GND
8
10.5
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±2.25 V to ±15 V
75
86
dB
−40°C ≤ TA ≤ +125°C
70
83
dB
Supply Current Per Amp
ISY
VO = 0 V
1
1.4
mA


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