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FQD19N10LTM Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FQD19N10LTM
Bauteilbeschribung  N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD19N10LTM Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQD19N10L
FQD19N10LTM
D-PAK
330 mm
16 mm
2500 units
©2000 Fairchild Semiconductor Corporation
FQD19N10L Rev. C1
www.fairchildsemi.com
2

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 1.35 mH, IAS = 15.6 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 19 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
Packing Method
Tape and Reel
Electrical Characteristics T
C = 25
oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
100
--
--
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
0.09
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
--
--
1
μA
VDS = 80 V, TC = 125°C
--
--
10
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
1.0
--
2.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.8 A
VGS = 5 V, ID = 7.8 A
--
0.074
0.082
0.10
0.11
Ω
gFS
Forward Transconductance
VDS = 30 V, ID = 7.8 A
--
14
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
(Note 4)
--
670
870
pF
Coss
Output Capacitance
--
160
210
pF
Crss
Reverse Transfer Capacitance
--
35
45
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 19 A,
RG = 25 Ω
--
14
38
ns
tr
Turn-On Rise Time
--
410
830
ns
td(off)
Turn-Off Delay Time
--
20
50
ns
tf
Turn-Off Fall Time
--
140
290
ns
Qg
Total Gate Charge
VDS = 80 V, ID = 19 A,
VGS = 5 V
(Note 4)
--
14
18
nC
Qgs
Gate-Source Charge
--
2.9
--
nC
Qgd
Gate-Drain Charge
--
9.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
15.6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
62.4
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 15.6 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 19 A,
dIF / dt = 100 A/μs
--
80
--
ns
Qrr
Reverse Recovery Charge
--
0.195
--
μC


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