Datenblatt-Suchmaschine für elektronische Bauteile |
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LM3046MX Datenblatt(PDF) 3 Page - Texas Instruments |
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LM3046MX Datenblatt(HTML) 3 Page - Texas Instruments |
3 / 13 page LM3046 www.ti.com SNLS372B – JULY 1999 – REVISED MARCH 2013 Electrical Characteristics (1) Parameter Conditions Min Typ Max Units Collector to Base Breakdown Voltage (V(BR)CBO) IC = 10 μA, IE = 0 20 60 V Collector to Emitter Breakdown Voltage (V(BR)CEO) IC = 1 mA, IB = 0 15 24 V Collector to Substrate Breakdown Voltage (V(BR)CIO) IC = 10 μA, ICI = 0 20 60 V Emitter to Base Breakdown Voltage (V(BR)EBO) IE 10 μA, IC = 0 5 7 V Collector Cutoff Current (ICBO) VCB = 10V, IE = 0 0.002 40 nA Collector Cutoff Current (ICEO) VCE = 10V, IB = 0 0.5 μA VCE = 3V IC = 10 mA 100 Static Forward Current Transfer Ratio (Static Beta) (hFE) IC = 1 mA 40 100 IC = 10 μA 54 Input Offset Current for Matched Pair Q1 and Q2 |IO1 − IIO2| VCE = 3V, IC = 1 mA 0.3 2 μA VCE = 3V IE = 1 mA 0.715 V Base to Emitter Voltage (VBE) IE = 10 mA 0.800 Magnitude of Input Offset Voltage for Differential Pair |VBE1 VCE = 3V, IC = 1 mA 0.45 5 mV − VBE2| Magnitude of Input Offset Voltage for Isolated Transistors 5 VCE = 3V, IC = 1 mA 0.45 mV |VBE3 − VBE4|, |VBE4 − VBE5|, |VBE5 − VBE3| Temperature Coefficient of Base to Emitter Voltage VCE = 3V, IC = 1 mA −1.9 mV/°C (1) Collector to Emitter Saturation Voltage (VCE(SAT)) IB = 1 mA, IC = 10 mA 0.23 V Temperature Coefficient of Input Offset Voltage VCE = 3V, IC = 1 mA 1.1 μV/°C (2) f = 1 kHz, VCE = 3V, IC = 100 Low Frequency Noise Figure (NF) 3.25 dB μA, RS = 1 kΩ LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS Forward Current Transfer Ratio (hfe) 110 Short Circuit Input Impednace (hie) 3.5 k Ω f = 1 kHz, VCE = 3V, IC = 1 mA Open Circuit Output Impedance (hoe) 15.6 μmho Open Circuit Reverse Voltage Transfer Ratio (hre) 1.8 x 10−4 ADMITTANCE CHARACTERISTICS Forward Transfer Admittance (Yfe) 31 − j 1.5 Input Admittance (Yie) 0.3+J 0.04 f = 1 MHz, VCE = 3V, IC = 1 Output Admittance (Yoe) 0.001+j 0.03 mA See Reverse Transfer Admittance (Yre) Figure 16 Gain Bandwidth Product (fT) VCE = 3V, IC = 3 mA 300 550 Emitter to Base Capacitance (CEB) VEB = 3V, IE = 0 0.6 pF Collector to Base Capacitance (CCB) VCB = 3V, IC = 0 0.58 pF Collector to Substrate Capacitance (CCI) VCS = 3V, IC = 0 2.8 pF (1) (TA = 25°C unless otherwise specified) Copyright © 1999–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM3046 |
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