Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1029X-T1 Datenblatt(PDF) 5 Page - Vishay Siliconix |
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SI1029X-T1 Datenblatt(HTML) 5 Page - Vishay Siliconix |
5 / 8 page Document Number: 71435 S-80643-Rev. B, 24-Mar-08 www.vishay.com 5 Vishay Siliconix Si1029X P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 012345 VDS - Drain-to-Source Voltage (V) VGS = 10 V 5 V 4 V 6 V 7 V 8 V 0 4 8 12 16 20 0 200 400 600 800 1000 I - Drain Current (mA) VGS = 4.5 V VGS = 10 V VGS = 5 V D 0 3 6 9 12 15 0.0 0.3 0.6 0.9 1.2 1.5 1.8 ID = 500 mA Qg - Total Gate Charge (nC) VDS = 30 V VDS = 48 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 300 600 900 1200 0246 8 10 VGS - Gate-to-Source Voltage (V) TJ = - 55 °C 125 °C 25 °C 0 8 16 24 32 40 05 10 15 20 25 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VGS = 0 V 0.0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS = 10 V at 500 mA VGS = 4.5 V at 25 mA |
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Ähnliche Beschreibung - SI1029X-T1 |
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