Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4927 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SC4927 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4927 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 6 V ICES Collector cut-off current VCE=1500V; RBE=0 0.5 mA hFE DC current gain IC=1A ; VCE=5V 25 VCE(sat) Collector-emitter saturation voltage IC=6A ; IB=1.2A 5 V VBE(sat) Base-emitter saturation voltage IC=6A ; IB=1.2A 1.5 V VECF Diode forward voltage IF=8A 2.0 V tf Fall time ICP=6A; fH=31.5kHz IB1=1.2A;IB2=-2.4A 0.5 µs |
Ähnliche Teilenummer - 2SC4927 |
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Ähnliche Beschreibung - 2SC4927 |
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