Datenblatt-Suchmaschine für elektronische Bauteile |
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BTA3513I3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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BTA3513I3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 7 page CYStech Electronics Corp. Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 1/9 BTA3513I3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTA3513I3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -7 V Collector Current (DC) IC -10 Collector Current (Pulse) ICP -16 (Note 1) A Power Dissipation @ TA=25℃ PD 1.75 (Note 2) Power Dissipation @ TC=25℃ PD 20 W Thermal Resistance, Junction to Ambient RθJA 71.4 (Note 2) °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦300μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. BTA3513I3 B:Base C:Collector E:Emitter BVCEO -80V IC -10A RCESAT 75mΩ typ. TO-251 B C B C E |
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