IRF22N60 datasheet(4/7 Pages) NELLSEMI

Teilenummer	IRF22N60

Bauteilbeschribung	N-Channel Power MOSFET

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Hersteller	NELLSEMI [Nell Semiconductor Co., Ltd]

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SEMICONDUCTOR

Nell High Power Products

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Fig.5 Typical capacitance vs. Drain-to-Source

voltage

Fig.7 Typical source-drain diode forward

voltage

100

40

0

80

120

1

10

100000

10

10000

1000

Drain-

voltage, V

(V)

DS

Source

160

Source-Drain voltage, V

(V)

SD

4

0

Fig.6 Typical gate charge vs. gate-to-source

voltage

Fig.8 Maximum safe operating area

Fig.9 Maximum drain current vs.

Case temperature

100

10

1.0

0.1

0.2

0.4

1.0

1.2

1.0

10

100

1000

20

10

25

15

25

50

75

100

125

150

Case temperature, T (°C)

C

Total gate charge, Q (nC)

G

10

1

100

Drain-source voltage, V

(V)

DS

I = 22 A

D

V

= 480V

DS

V

= 120V

DS

V

= 300V

DS

0

5

0.6

0.8

0.1

IRF22N60 Series

C

=

(

)

iss

C

+C

C

shorted

gs

gd

ds

C

= C

+C

oss

ds

gd

C

= C

rss

gd

V

= 0V, f = 1MHz

GS

Ciss

Crss

Coss

100

1000

20

8

16

12

T =25ºC

J

T =150ºC

J

1.4

Operation in This Area is Limited by RDS(ON)

Note:

1. T

2. T

= 25°C

C

= 150°C

J

3. Single Pulse

100µs

1ms

10ms

10000

V

=0V

GS

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New Jersey Semi-Conduct...	IRF220	135Kb / 3P	Nanosecond Switching Speeds
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IRF22N60 Datenblatt(PDF) 4 Page - Nell Semiconductor Co., Ltd

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Ähnliche Teilenummer - IRF22N60

Ähnliche Beschreibung - IRF22N60

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