Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4793AF Datenblatt(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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2SC4793AF Datenblatt(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 3 page FEATURES APPLICATIONS SEMICONDUCTOR RoHS RoHS High Frequency NPN Power Transistor Nell High Power Products 1A/230V/20W Page 1 of 3 www.nellsemi.com UNIT W V °C A VALUE 1 2 230 5 0.1 230 20 150 -55 to 150 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C TEST CONDITIONS I =0 B T =25°C C Collector power dissipation PARAMETER Peak collector current Collector current-continuous Storage temperature Emitter to base voltage Collector to emitter voltage Collector to base voltage SYMBOL PC VCEO VCBO VEBO I (I ) CM cp TSTG IC Base Current IB Junction temperature TJ I =0 C High transition frequency: f = 100MHz (typ.) T Complementary to 2SA1837AF TO-220F package which can be installed to the heat sink with one screw Power amplifier Driver stage amplifier UNIT 230 1.0 1.0 320 100 100 20 1.0 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) C TEST CONDITIONS V =230V, l =0 CBO E Transition frequeucy Collector to emitter saturation voltage PARAMETER Collector to emitter breakdown voltage Base to emitter voltage Emitter cutoff current Collector cutoff current SYMBOL ICBO lEBO V(BR)CEO VCE(sat)* VBE FT Cob Collector output capacitance Min. Typ. Max. V =5V, l =0 EBO C I =0, I =100mA B c I =0.1A, V =5V C CE I =0.5A, V =5V C CE V =10V, I =100mA CE C V =10V, I =0, f=1MHz CB E Forward current transfer ratio (DC current gain) hFE* μA T =125°C C T =25°C C 100 I =0.5A, I =50mA C B 1.5 *Pulsed: Pulse duration= 300μs, duty cycle= 1.5%. V NPN C B E (2) (1) (3) t <5 ms p 2SC4793AF TO-220F ( ) 2SC4793AF B E C T =25°C a 2.0 pF MHz |
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