Datenblatt-Suchmaschine für elektronische Bauteile |
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FQPF47P06YDTU Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FQPF47P06YDTU Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page FQPF47P06 / FQPF47P06YDTU Thermal Characteristics Symbol Parameter FQPF47P06 / FQPF47P06YDTU Unit VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -30 A - Continuous (TC = 100°C) -21.2 A IDM Drain Current - Pulsed (Note 1) -120 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 820 mJ IAR Avalanche Current (Note 1) -30 A EAR Repetitive Avalanche Energy (Note 1) 6.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns PD Power Dissipation (TC = 25°C) 62 W - Derate above 25°C 0.41 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Unit RθJC Thermal Resistance, Junction-to-Case -- 2.42 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! S D G Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A • Low Gate Charge (Typ. 84 nC) • Low Crss ( Typ. 320 pF) • 100% Avalanche Tested March 2013 P-Channel QFET® MOSFET • 175°C Maximum Junction Temperature Rating -60 V, -30 A, 26 mΩ ©2001 Fairchild Semiconductor Corporation FQPF47P06 / FQPF47P06YDTU Rev. C0 www.fairchildsemi.com Absolute Maximum Ratings T C = 25°C unless otherwise noted TO-220F G D S |
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