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IRLR3915TRPBF Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRLR3915TRPBF
Bauteilbeschribung  Advanced Process Technology
Download  11 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLR3915TRPBF Datenblatt(HTML) 2 Page - International Rectifier

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IRLR/U3915PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.3
V
TJ = 25°C, IS = 30A, VGS = 0V
„
trr
Reverse Recovery Time
–––
62
93
ns
TJ = 25°C, IF = 30A, VDD = 25xjkl V
Qrr
Reverse Recovery Charge
––– 110
170
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.057 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
12
14
VGS = 10V, ID = 30A
„
–––
14
17
VGS = 5.0V, ID = 26A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
42
–––
–––
S
VDS = 25V, ID = 30A
–––
–––
20
µA
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 55V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -16V
Qg
Total Gate Charge
–––
61
92
ID = 30A
Qgs
Gate-to-Source Charge
–––
9.0
14
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
17
25
VGS = 10V
„
td(on)
Turn-On Delay Time
–––
7.4
–––
VDD = 28V
tr
Rise Time
–––
51
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
83
–––
RG = 8.5
tf
Fall Time
–––
100
–––
VGS = 10V
„
Between lead,
–––
–––
nH
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1870 –––
VGS = 0V
Coss
Output Capacitance
–––
390
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
74
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 2380 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
290
–––
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
…
–––
540
–––
VGS = 0V, VDS = 0V to 44V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
S
D
G
Source-Drain Ratings and Characteristics
61
240
A
m


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