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FQD1N60CTM Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FQD1N60CTM
Bauteilbeschribung  N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
FQD1N60C / FQU1N60C Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted.
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 59 mH, IAS = 1.1 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 1.1 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD1N60C
FQD1N60CTM
D-PAK
330mm
16mm
2500 units
FQU1N60C
FQU1N60CTU
I-PAK
Tube
N/A
70 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
600
--
--
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
μA
VDS = 480 V, TC = 125°C
--
--
10
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.5 A
--
2.8
3.4
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 0.5 A
--
3.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
130
170
pF
Coss
Output Capacitance
--
19
25
pF
Crss
Reverse Transfer Capacitance
--
3.5
4.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 1.1 A,
RG = 25 Ω
(Note 4)
--
7
24
ns
tr
Turn-On Rise Time
--
21
52
ns
td(off)
Turn-Off Delay Time
--
13
36
ns
tf
Turn-Off Fall Time
--
27
64
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 1.1 A,
VGS = 10 V
(Note 4)
--
4.8
6.2
nC
Qgs
Gate-Source Charge
--
0.7
--
nC
Qgd
Gate-Drain Charge
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
4
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.5 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 1.1 A,
dIF / dt = 100 A/μs
--
190
--
ns
Qrr
Reverse Recovery Charge
--
0.53
--
μC


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