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FQD1N60CTM Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FQD1N60CTM Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2003 Fairchild Semiconductor Corporation FQD1N60C / FQU1N60C Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted. NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 59 mH, IAS = 1.1 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 1.1 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Device Marking Device Package Reel Size Tape Width Quantity FQD1N60C FQD1N60CTM D-PAK 330mm 16mm 2500 units FQU1N60C FQU1N60CTU I-PAK Tube N/A 70 units Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 600 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 μA VDS = 480 V, TC = 125°C -- -- 10 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A -- 2.8 3.4 Ω gFS Forward Transconductance VDS = 40 V, ID = 0.5 A -- 3.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 130 170 pF Coss Output Capacitance -- 19 25 pF Crss Reverse Transfer Capacitance -- 3.5 4.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 1.1 A, RG = 25 Ω (Note 4) -- 7 24 ns tr Turn-On Rise Time -- 21 52 ns td(off) Turn-Off Delay Time -- 13 36 ns tf Turn-Off Fall Time -- 27 64 ns Qg Total Gate Charge VDS = 480 V, ID = 1.1 A, VGS = 10 V (Note 4) -- 4.8 6.2 nC Qgs Gate-Source Charge -- 0.7 -- nC Qgd Gate-Drain Charge -- 2.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/μs -- 190 -- ns Qrr Reverse Recovery Charge -- 0.53 -- μC |
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