Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB06N03I3 Datenblatt(PDF) 3 Page - Cystech Electonics Corp. |
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MTB06N03I3 Datenblatt(HTML) 3 Page - Cystech Electonics Corp. |
3 / 7 page CYStech Electronics Corp. Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 3/9 MTB06N03I3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 40 80 120 160 200 240 0 2468 10 VDS, Drain-Source Voltage(V) 5V, 6V,7V,8V,9V,10V VGS=3V VGS=4V VGS=2V Brekdown Voltage vs Ambient Temperature 20 25 30 35 40 45 50 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 1 10 100 1000 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=10V VGS=2.5V VGS=3V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 04 8 12 16 2 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 10 20 30 40 50 60 70 80 90 100 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS=10V, ID=30A VGS, Gate-Source Voltage(V) ID=30A |
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Ähnliche Beschreibung - MTB06N03I3 |
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