Datenblatt-Suchmaschine für elektronische Bauteile |
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MTB09P03J3 Datenblatt(PDF) 2 Page - Cystech Electonics Corp. |
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MTB09P03J3 Datenblatt(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C808J3 Issued Date : 2010.01.18 Revised Date : 2013.12.26 Page No. : 2/9 MTB09P03J3 CYStek Product Specification Absolute Maximum Ratings (TC=25 °C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ TC=25 °C ID -75 Continuous Drain Current @ TC=100 °C ID -48 Pulsed Drain Current *1 IDM -160 Avalanche Current IAS -20 A Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω EAS 20 mJ Total Power Dissipation @TC=25℃ 93 Total Power Dissipation @TC=100℃ Pd 50 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C 100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-15A, Rated VDS=-30V P-Channel Note : *1 . Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.34 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 (Note) °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Note : When mounted on the minimum pad size recommended (PCB mount). Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0V, ID=-250μA VGS(th) -1 -1.5 -3 V VDS =VGS, ID=-250μA GFS *1 - 37 - S VDS =-5V, ID=-25A IGSS - - ± 100 nA VGS=±20, VDS=0V - - -1 VDS =-24V, VGS =0V IDSS - - -10 μA VDS =-24V, VGS =0V, Tj=125 °C - 8 9 VGS =-10V, ID=-25A RDS(ON) *1 - 11 15 mΩ VGS =-4.5V, ID=-10A Dynamic Qg *1, 2 - 56 - Qgs *1, 2 - 7.9 - Qgd *1, 2 - 11.5 - nC ID=-25A, VDS=-15V, VGS=-10V td(ON) *1, 2 - 22 - tr *1, 2 - 20 - td(OFF) *1, 2 - 65 - tf *1, 2 - 12 - ns VDS=-15V, ID=-1A, VGS=-10V, RG=2.7Ω |
Ähnliche Teilenummer - MTB09P03J3 |
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Ähnliche Beschreibung - MTB09P03J3 |
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