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2SC4959-T2 Datenblatt(PDF) 3 Page - NEC

Teilenummer 2SC4959-T2
Bauteilbeschribung  HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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Hersteller  NEC [NEC]
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2SC4959-T2 Datenblatt(HTML) 3 Page - NEC

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2SC4959
3
60
01
500 A
400 A
300 A
200 A
IB = 100 A
50
40
30
20
10
23456
0.1
200
100
0
0.2
0.5
1
2
5
10
20
50 100
5 V
VCE = 3 V
14
0.5
12
10
8
6
4
2
12
5
10
20
50
5 V
3 V
VCE = 1 V
10
1
8
6
4
2
2
5
10
50
20
5 V
3 V
VCE = 1 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
f = 2 GHz
VCE – Collector to Emitter Voltage – V
IC – Collector Current – mA
IC – Collector Current – mA
IC – Collector Current – mA
m
m
m
m
m
4
0.5
3
2
1
0
12
5
10
20
50
0.2
0.5
1
2
5
10
20
0.3
0.4
0.5
0.6
f = 2 GHz
VCE = 3 V
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
IC – Collector Current – mA
VCB – Collector to Base Voltage – V


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