Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SD1115K Datenblatt(PDF) 2 Page - Savantic, Inc. |
|
2SD1115K Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1115K CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=2A ; PW=50µs f=50Hz, L=10mH 300 V VCBO Collector-base breakdown voltage IC=0.1A ,IE=0 400 V VEBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=20mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=20mA 2.0 V ICEO Collector cut-off current VCE=300V; RBE=A 0.1 mA hFE DC current gain IC=2A ; VCE=2V 500 Switching times ton Turn-on time 1.0 µs toff Turn-off time IC=2A;IB1=- IB2=20mA 22 µs |
Ähnliche Teilenummer - 2SD1115K |
|
Ähnliche Beschreibung - 2SD1115K |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |