Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLTS6342TRPBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRLTS6342TRPBF Datenblatt(HTML) 2 Page - International Rectifier |
2 / 8 page IRLTS2242PbF 2 www.irf.com G D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2%. When mounted on 1 inch square copper board. Thermal Resistance Parameter Typ. Max. Units RJA Junction-to-Ambient e ––– 62.5 °C/W Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 9.4 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 26 32 ––– 45 55 VGS(th) Gate Threshold Voltage -0.4 ––– -1.1 V VGS(th) Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 8.5 ––– ––– S Qg Total Gate Charge ––– 12 ––– Qgs Gate-to-Source Charge ––– 1.5 ––– Qgd Gate-to-Drain Charge ––– 4.3 ––– RG Gate Resistance ––– 17 ––– td(on) Turn-On Delay Time ––– 5.8 ––– tr Rise Time ––– 18 ––– td(off) Turn-Off Delay Time ––– 81 ––– tf Fall Time ––– 68 ––– Ciss Input Capacitance ––– 905 ––– Coss Output Capacitance ––– 280 ––– Crss Reverse Transfer Capacitance ––– 200 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 41 62 ns Qrr Reverse Recovery Charge ––– 16 24 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = -10μA VGS = -2.5V, ID = -5.5A d m VDD = -10V, VGS = -4.5V VDS = -10V RG = 6.8 VDS = -10V, ID = -5.5A VDS = -16V, VGS = 0V, TJ = 125°C μA ID = -5.5A ID = -5.5A VGS = 0V VDS = -10V VDS = -16V, VGS = 0V TJ = 25°C, IF = -5.5A, VDD = -16V di/dt = 100A/μs dà TJ = 25°C, IS = -5.5A, VGS = 0V d showing the integral reverse p-n junction diode. Conditions ƒ = 1.0KHz Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -6.9A d ––– ––– -55 ––– ––– -2.0 MOSFET symbol nA ns A pF nC VGS = -4.5V VGS = -12V VGS = 12V |
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