NE3505M04-T2 datasheet(4/20 Pages) CEL

Teilenummer	NE3505M04-T2

Bauteilbeschribung	HETERO JUNCTION FIELD EFFECT TRANSISITOR

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Hersteller	CEL [California Eastern Labs]

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NE3505M04

TYPICAL CHARACTERISTICS

(TA = +25

°C)

NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

110

100

Frequency f (GHz)

0

2

4

6

8

10

12

14

16

18

20

@VDS=2V

ID=15mA

NFmin

Ga

NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

5

10

15

20

25

30

Drain Current ID (mA)

0

2

4

6

8

10

12

14

16

18

20

@VDS=2V

f=4GHz

NFmin

Ga

NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

5

10

15

20

25

30

Drain Current ID (mA)

0

2

4

6

8

10

12

14

16

18

20

@VDS=2V

f=2.5GHz

NFmin

Ga

NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

5

10

15

20

25

30

Drain Current ID (mA)

0

2

4

6

8

10

12

14

16

18

20

@VDS=2V

f=6GHz

NFmin

Ga

Ähnliche Teilenummer - NE3505M04-T2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
California Eastern Labs	NE350184C	269Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE350184C	223Kb / 11P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2005
California Eastern Labs	NE350184C-T1	269Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE350184C-T1	223Kb / 11P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2005
Renesas Technology Corp	NE350184C-T1-A	223Kb / 11P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2005

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Ähnliche Beschreibung - NE3505M04-T2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
California Eastern Labs	NE3508M04	1Mb / 11P	HETERO JUNCTION FIELD EFFECT TRANSISITOR
Renesas Technology Corp	NE3210S01	197Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
Renesas Technology Corp	NE38018	236Kb / 13P	Hetero Junction Field Effect transistor 2003
California Eastern Labs	NE3512S02	270Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
California Eastern Labs	NE3514S02	285Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Renesas Technology Corp	NE32484A	195Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
	NE32900	181Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1997
	NE32500	199Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1996
	NE34018	250Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2000
California Eastern Labs	NE3515S02-A	415Kb / 9P	HETERO JUNCTION FIELD EFFECT TRANSISTOR

More results

NE3505M04-T2 Datenblatt(PDF) 4 Page - California Eastern Labs

NE3505M04-T2 Datenblatt(HTML) 4 Page - California Eastern Labs

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