DATA SHEET

L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

- Super Low Noise Figure & Associated Gain :

NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz

NF=0.35dB TYP. Ga=17dB TYP.

@f=2.4GHz (Reference Only)

NF=0.45dB TYP. Ga=14dB TYP.

@f=5.8GHz (Reference Only)

- Flat-lead 4-pin tin-type super mini-mold(M04) package

APPLICATIONS

- Satellite Radio(SDARS, DMB, etc.) antenna LNA

- 5.8GHz-band WLAN LNA

- LNA for Micro-wave communication system

ORDERING INFORMATION

PART NUMBER

Quantity

Marking

Packaging Style

NE3505M04

50pcs (Non reel)

NE3505M04-T2

3 Kpcs/reel

V76

8 mm wide emboss taping

1pin(source), 2pin(Drain) feed hole direction

Remark To order evaluation samples, please contact your local NEC sales office.

Part number for sample order: NE3505M04

°C )

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

4.0

V

Gate to Source Voltage

-3.0

V

Drain Current

mA

Gate Current

IG

140

µA

Total Power Dissipation

125

mW

Channel Temperature

+125

°C

Storage Temperature

- 65 to +125

°C

Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

HETERO JUNCTION FIELD EFFECT TRANSISITOR

NE3505M04

Document No. P*****EJ0V0PM00 (1st edition)

© NEC Compound Semiconductor Devices 2004

Date Published August 2004

CP(K)

Printed in Japan