Datenblatt-Suchmaschine für elektronische Bauteile |
|
SFRU9024 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
|
SFRU9024 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page SFR/U9024 -60 -- -2.0 -- -- -- -- -- -0.04 -- -- -- -- -- 140 40 11 21 29 20 15 2.9 6.0 -- -- -4.0 -100 100 -10 -100 0.28 -- 600 215 60 30 50 65 50 19 -- -- 3.7 465 -- -- -- 80 0.22 -7.8 -31 -3.8 -- -- Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3.0mH, I AS=-7.8A, VDD=-25V, RG=27Ω*, Starting TJ =25 oC I SD -9.7A, di/dt 250A/ µs, V DD BV DSS , Starting TJ =25 oC Pulse Test : Pulse Width = 250 µs, Duty Cycle 2% Essentially Independent of Operating Temperature _ < O 1 O 2 O 3 O 4 O 5 _ < _ < _ < P-CHANNEL POWER MOSFET Electrical Characteristics (T C=25 oC unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic Symbol Max. Units Typ. Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge g fs C iss C oss C rss t d(on) t r t d(off) t f Q g Q gs Q gd BV DSS ∆BV/∆T J V GS(th) R DS(on) I GSS I DSS V V/ o C V nA µA Ω pF ns nC -- -- -- -- -- -- -- -- -- -- -- -- -- V GS=0V,ID=-250µA I D=-250µA See Fig 7 V DS=-5V,ID=-250µA V GS=-20V V GS=20V V DS=-60V V DS=-48V,TC=125 o C V GS=-10V,ID=-3.9A V DS=-30V,ID=-3.9A V DD=-30V,ID=-9.7A, R G=18 See Fig 13 V DS=-48V,VGS=-10V, I D=-9.7A See Fig 6 & Fig 12 Drain-to-Source Leakage Current V GS=0V,VDS=-25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge I S I SM V SD t rr Q rr Characteristic Symbol Max. Units Typ. Min. Test Condition -- -- -- -- -- A V ns µC Integral reverse pn-diode in the MOSFET T J=25 o C,I S=-7.8A,VGS=0V T J=25 o C,I F=-9.7A di F/dt=100A/µs Ω O 4 O 5 O 4 O 4 O 5 O 4 O 4 O 4 O 1 S |
Ähnliche Teilenummer - SFRU9024 |
|
Ähnliche Beschreibung - SFRU9024 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |