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IXYN100N120C3H1 Datenblatt(PDF) 3 Page - IXYS Corporation

Teilenummer IXYN100N120C3H1
Bauteilbeschribung  1200V XPTTM IGBT GenX3TM w/ Diode
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Hersteller  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYN100N120C3H1 Datenblatt(HTML) 3 Page - IXYS Corporation

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IXYN100N120C3H1
Fig. 1. Output Characteristics @ TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
200
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VCE - Volts
VGE = 15V
13V
12V
11V
10V
7V
9V
6V
8V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
50
100
150
200
250
300
0
5
10
15
20
25
VCE - Volts
VGE = 15V
13V
12V
10V
8V
11V
9V
7V
6V
Fig. 3. Output Characteristics @ TJ = 125ºC
0
20
40
60
80
100
120
140
160
180
200
012
34
56
78
VCE - Volts
8V
7V
6V
9V
VGE = 15V
13V
12V
11V
10V
5V
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGE = 15V
I C = 100A
I C = 50A
I C = 200A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
6789
10
11
12
13
14
15
VGE - Volts
I C = 200A
TJ = 25ºC
100A
50A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.5
4.5
5.5
6.5
7.5
8.5
9.5
VGE - Volts
TJ = - 40ºC
25ºC
125ºC


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