STP10NM60ND datasheet(8/19 Pages) STMICROELECTRONICS

Teilenummer	STP10NM60ND

Bauteilbeschribung	N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

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8 / 19 page

Electrical characteristics

STD10NM60ND, STF10NM60ND, STP10NM60ND

8/19

Doc ID 18467 Rev 2

Figure 14.

Normalized gate threshold voltage

vs temperature

Figure 15.

Normalized on resistance vs

temperature

Figure 16.

Source-drain diode forward

characteristics

Figure 17.

Normalized VDS vs temperature

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

ID=250µA

AM08982v1

RDS(on)

1.7

1.3

0.9

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

2.1

1.9

1.5

1.1

0.7

ID = 4 A

AM08983v1

VSD

0

4

ISD(A)

(V)

2

6

8

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

AM08985v1

VDS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.92

0.94

0.96

0.98

1.00

1.02

1.04

1.06

ID=1mA

1.08

1.10

AM09028v1

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