FDD3580 datasheet(2/5 Pages) FAIRCHILD

Teilenummer	FDD3580

Bauteilbeschribung	80V N-Channel PowerTrench??MOSFET

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

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FDD3580/FDU3580 Rev. A1(W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain-Source Avalanche Ratings (Note 2)

WDSS

Single Pulse Drain-Source

Avalanche Energy

VDD = 40 V,

ID = 7.7 A

245

mJ

IAR

Maximum Drain-Source

Avalanche Current

7.7

A

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250

µA

80

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250

µA, Referenced to 25°C

79

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 64 V,

VGS = 0 V

1

µA

IGSSF

Gate–Body Leakage, Forward

VGS = 20 V,

VDS = 0 V

100

nA

IGSSR

Gate–Body Leakage, Reverse

VGS = –20 V, VDS = 0 V

–100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,ID = 250

µA

22.5

4

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = 250

µA, Referenced to 25°C

−7mV/°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 7.7 A

VGS = 6 V,

ID = 7.2 A

VGS = 10 V,

ID = 7.7 A,TJ=125

°C

23

24

37

29

33

50

m

Ω

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 10 V

30

A

gFS

Forward Transconductance

VDS = 10 V,

ID = 7.7 A

28

S

Dynamic Characteristics

Ciss

Input Capacitance

1760

pF

Coss

Output Capacitance

144

pF

Crss

Reverse Transfer Capacitance

VDS = 40 V,

V GS = 0 V,

f = 1.0 MHz

72

pF

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

13

23

ns

tr

Turn–On Rise Time

8

16

ns

td(off)

Turn–Off Delay Time

34

54

ns

tf

Turn–Off Fall Time

VDD = 40 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6

Ω

16

29

ns

Qg

Total Gate Charge

35

49

nC

Qgs

Gate–Source Charge

6.2

nC

Qgd

Gate–Drain Charge

VDS = 40V,

ID = 7.7 A,

VGS = 10 V,

8.6

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

3.2

A

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = 3.2 A

(Note 2)

0.73

1.2

V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 40 °C/W when mounted on a

1in

2 pad of 2 oz copper.

Scale 1 : 1 on letter size paper

b) RθJA = 96 °C/W when mounted

on a minimum pad.

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

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