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FQD17P06TF Datenblatt(PDF) 3 Page - Fairchild Semiconductor

Teilenummer FQD17P06TF
Bauteilbeschribung  N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD17P06TF Datenblatt(HTML) 3 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FQD19N10 Rev. C1
www.fairchildsemi.com
3
 !  
04
8
12
16
20
0
2
4
6
8
10
12
V
DS = 50V
V
DS = 80V
※
Note : I
D = 19A
Q
G, Total Gate Charge [nC]
10
-1
0
10
1
0
300
600
900
1200
1500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※
Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
10
V
DS, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
-1
10
0
10
1
25℃
150℃
※
Notes :
1. V
GS = 0V
2. 250
μs Pulse Test
V
SD , Source-Drain Voltage [V]
0
0
2
40
0
6
0
8
0.00
0.06
0.12
0.18
0.24
0.30
※
Note : T
J = 25
℃
V
GS = 20V
V
GS = 10V
I
D , Drain Current [A]
4
2
6
8
10
10
-1
10
0
10
1
※
Notes :
1. V
DS = 40V
2. 250
μ s Pulse Test
-55℃
150℃
25℃
V
GS , Gate-Source Voltage [V]
10
-1
0
10
1
10
0
10
1
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
※
Notes :
1. 250
μs Pulse Test
2. T
C = 25
℃
10
V
DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics


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