FQD17P06 datasheet(3/9 Pages) FAIRCHILD

Teilenummer	FQD17P06

Bauteilbeschribung	P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FQD17P06 / FQU17P06 Rev C3

Typical Performance Characteristics

0

1

20

0

3

0

4

0

5

60

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

0.36

0.40

∝

Note : T

J = 25∩

V

GS = - 20V

V

GS = - 10V

-I

D , Drain Current [A]

10

-1

0

10

1

10

0

10

1

V

GS

Top :

- 15.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom: - 4.5 V

∝

Notes :

1. 250レs Pulse Test

2. T

C = 25∩

10

-V

DS, Drain-Source Voltage [V]

0

4

8

2

1

6

1

20

24

0

2

4

6

8

10

12

V

DS = -30V

V

DS = -48V

∝

Note : I

D = -17 A

Q

G, Total Gate Charge [nC]

10

-1

0

10

1

0

200

400

600

800

1000

1200

1400

1600

1800

2000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

∝

Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

10

VDS, Drain-Source Voltage [V]

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

10

-1

10

0

10

1

150∩

∝

Notes :

1. V

GS = 0V

2. 250レs Pulse Test

25∩

-V

SD , Source-Drain Voltage [V]

24

6

8

10

-1

10

0

10

1

150∩

25∩

-55∩

∝

Notes :

1. V

DS = -30V

2. 250レs Pulse Test

-V

GS , Gate-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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FQD17P06 Datenblatt(PDF) 3 Page - Fairchild Semiconductor

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