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BD138 Datenblatt(PDF) 2 Page - Continental Device India Limited

Teilenummer BD138
Bauteilbeschribung  EPITAXIAL SILICON POWER TRANSISTORS
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Hersteller  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BD138 Datenblatt(HTML) 2 Page - Continental Device India Limited

  BD138 Datasheet HTML 1Page - Continental Device India Limited BD138 Datasheet HTML 2Page - Continental Device India Limited BD138 Datasheet HTML 3Page - Continental Device India Limited BD138 Datasheet HTML 4Page - Continental Device India Limited  
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PNP EPITAXIAL SILICON POWER TRANSISTORS
BD136 BD138
BD140
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MAX
UNIT
DC Current Gain
*hFE Group
IC=0.15A, VCE=2V
- 6
100
- 10
160
- 16
250
- 25
400
Collector Emitter Saturation Voltage
*VCE (sat)
IC=0.5A, IB=0.05A
0.5
V
Base Emitter On Voltage
*VBE(on)
*IC=0.5A, VCE=2V
1.0
V
*Pulse test:- Pulse width=300
µµs, duty cycle=2%
MIN
160
40
63
100
B
C
E
Continental Device India Limited
Data Sheet
Page 2 of 4


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